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| KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching * Complement to KSD1616/1616A 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature : KSB1116 : KSB1116A : KSB1116 : KSB1116A Ratings -60 -80 -50 -60 -6 -1 -2 0.75 150 -55 ~ 150 Units V V V V V A A W C C * PW10ms, Duty Cycle50% Electrical Characteristics Ta=25C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) VBE (sat) Cob fT tON tSTG tF * Base-Emitter On Voltage * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain : KSB1116 : KSB1116A Test Condition VCB= -60V, IE=0 VEB= -6V, IC= 0 VCE= -2V, IC= -100mA VCE= -2V, IC = -1A VCE= -2V, IC= -50mA IC= -1A, IB= -50mA IC= -1A, IB= -50mA VCB= -10V, IE=0, f=1MHz VCE= -2V, IC= -100mA VCC= -10V, IC= -100mA IB1= -IB2= -10mA VBE (off)= 2~3V 70 135 135 81 -600 -650 -0.2 -0.9 25 120 0.07 0.7 0.07 Min. Typ. Max. -100 -100 600 400 -700 -0.3 -1.2 mV V V pF MHz s s s Units nA nA * Pulse Test: PW 350s, Duty Cycle2% hFE Classification Classification hFE1 Y 135 ~ 270 G 200 ~ 400 L 300 ~ 600 (c)2002 Fairchild Semiconductor Corporation Rev. A2, January 2002 KSB1116/1116A Typical Characteristics -100 -1.0 IB = -250A IB = -5.0mA IB = -200A IB = -4.5mA IB = -3.5mA IB = -4.0mA IC[mA], COLLECTOR CURRENT -80 IC[A], COLLECTOR CURRENT -0.8 IB = -3.0mA IB = -2.5mA IB = -150A -60 -0.6 IB = -2.0mA IB = -1.5mA IB = -100A -40 -0.4 IB = -1.0mA IB = -0.5mA IB = -50A -20 -0.2 0 0 -2 -4 -6 -8 -10 0.0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = -2V IC = 20 IB hFE, DC CURRENT GAIN 100 -1 VBE(sat) 10 -0.1 V CE(sat) 1 -0.01 -0.1 -1 -10 -0.01 -0.01 -0.1 -1 -10 IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1000 VCC = -10V IC = 10IB1 = -10IB2 IE =0 f = 1MHz tON, tSTG, tF [s], TIME Cob[pF], CAPACITANCE -1 1 100 tSTG 0.1 10 tF tON 0.01 -0.001 -0.01 -0.1 1 -1 -10 -100 IC[A], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Switching Time Figure 6. Collector Output Capacitance (c)2002 Fairchild Semiconductor Corporation Rev. A2, January 2002 KSB1116/1116A Typical Characteristics (Continued) fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 -10 VCE = -2V IC[A], COLLECTOR CURRENT 100 -1 200ms 10 ms PW =1 m s 10 DC -0.1 1 -0.01 -0.1 -1 -10 -0.01 -1 -10 KSB1116A -100 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area 0.8 0.7 PC[W], POWER DISSIPATION 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 o 75 100 125 150 175 Ta[ C], AMBIENT TEMPERATURE Figure 9. Power Derating (c)2002 Fairchild Semiconductor Corporation KSB1116 Rev. A2, January 2002 KSB1116/1116A Package Demensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A2, January 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. H4 |
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